ACE1420M

ACE1420M N-Channel 20-V MOSFET Description The ACE1420M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS 20 V VGS ±8 V 15 ID A 11.9 IDM 60 A IS 2.9 A 3 PD W 1.9 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 40 90 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN2*2-6L ACE1420M N-Channel 20-V MOSFET Ordering information ACE1420M MN + H Halogen - free Pb - free MN : DFN2*2-6L VER 1.1 2 ACE1420M N-Channel 20-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(...