ACE1421M

ACE1421M P-Channel 20-V MOSFET Description The ACE1421M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications Load Switches DC/DC Conversion Motor Drives Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a TA=25℃ TA=70℃ Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Limit Units VDS -20 V VGS ±8 V -8.8 ID A -7 IDM -40 A IS -5 A 3 PD W 1.9 TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 40 90 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN2*2-6L ACE1421M P-Channel 20-V MOSFET Ordering information ACE1421M MN + H Halogen - free Pb - free MN : DFN2*2-6L VER 1.1 2 ACE1421M P-Channel 20-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS On-State D...