N-Channel MOSFET
ACE2302M N-Channel 20-V MOSFET
Description ACE2302M uses advanced trench technology to provide excellent RDS(ON). This ...
Description
ACE2302M N-Channel 20-V MOSFET
Description ACE2302M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology Low thermal impedance Fast switching speed
Applications
White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a Pulse Drain Current b
TA=25℃ TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃ TA=70℃
Operating Temperature / Storage Temperature
*1 Pw ≦10 μs, Duty cycle ≦1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol VDS VGS
ID
IDM IS
PD
TJ/TSTG
Limit 20 ±8 3.4 2.7 10 1.6 1.3 0.8
-55/150
Units V V
A
A A
W
OC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t <= 10 sec Steady State
RθJA
100 166
Units OC/W
VER 1.1 1
Packaging Type SOT-23-3
D
GS
Ordering information ACE2302MBM + H Halogen - free Pb - free BM : SOT-23-3
ACE2302M N-Channel 20-V MOSFET
VER 1.1 2
ACE2302M N-Channel 20-V MOSFET
Electrical Characteristics
(TA=25℃, unless otherwise specified)
Parameter
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a ...
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