AUIRF7647S2TR

  AUTOMOTIVE GRADE AUIRF7647S2TR  Advanced Process Technology  Optimized for Class D Audio Amplifier Applications  Low Rds(on) for Improved Efficiency  Low Qg for Better THD and Improved Efficiency  Low Qrr for Better THD and Lower EMI  Low Parasitic Inductance for Reduced Ringing and Lower EMI  Delivers up to 100W per Channel into 8 with No Heatsink  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max. RG (typical) Qg (typical) 100V 26m 31m 1.6 14nC    S DG D S Applicable DirectFET® Outline and Substrate Outline  SC DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7647S2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems This HEXFET® Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistan...