AUIRF7759L2TR

AUTOMOTIVE GRADE PD - 96426 AUIRF7759L2TR Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * AUIRF7759L2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 75V RDS(on) typ. 1.8mΩ max. 2.3mΩ ID (Silicon Limited) 160A Qg 200nC SS SS D GS S D S S Applicable DirectFET® Outline and Substrate Outline  SB SC M2 M4 L 8 DirectFET®ISOMETRIC L4 L6 L8 Description The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging platfor...