Power MOSFET
AUTOMOTIVE GRADE
AUIRF7769L2TR
Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and
othe...
Description
AUTOMOTIVE GRADE
AUIRF7769L2TR
Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS RDS(on) typ.
max.
ID (Silicon Limited) Qg (typical)
100V 2.8m 3.5m 124A 200nC
D
S S
GS S
S S
D S S
Applicable DirectFET® Outline and Substrate Outline
L8 DirectFET® ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7769L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging platform coupled with the latest...
Similar Datasheet