Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repe...
Description
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
G S
D
AUIRFS4127 AUIRFSL4127
HEXFET® Power MOSFET
VDSS RDS(on) typ.
max ID
200V 18.6m 22m
72A
D
S G D2Pak AUIRFS4127
G Gate
D Drain
S D G
TO-262 AUIRFSL4127
S Source
Base part number AUIRFSL4127 AUIRFS4127
Package Type TO-262 D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL4127 AUIRFS4127 AUIRFS4127TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resis...
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