AUIRL7766M2TR

  AUTOMOTIVE GRADE AUIRL7766M2TR  Advanced Process Technology  Optimized for Automotive DC-DC and other Heavy Load Applications  Logic Level Gate Drive  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg (typical) 100V 8.0m 10m 51A 44nC    SS D G SS D Applicable DirectFET® Outline and Substrate Outline  M4 DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the la...