AUIRL7766M2TR1

PD - 97648 AUTOMOTIVE GRADE AUIRL7766M2TR AUIRL7766M2TR1 Automotive DirectFET® Power MOSFET ‚ Advanced Process Technology Optimized for Automotive DC-DC and other Heavy Load Applications Logic Level Gate Drive Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * Applicable DirectFET® Outline and Substrate Outline  V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 100V 8.0mΩ 10mΩ 51A 44nC SS D G SS D M4 DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform co...