Power MOSFET
AUIRLS8409-7P
Features Advanced Process Technology Logic Level Gate Drive Ultra Low On-Resistance 175°C Opera...
Description
AUIRLS8409-7P
Features Advanced Process Technology Logic Level Gate Drive Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
VDSS RDS(on)
typ. max.
ID (Silicon Limited) ID (Package Limited)
40V 0.50m 0.75m 500A
240A
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
Applications Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid Heavy Loads DC-DC Converter
G Gate
D2Pak 7 Pin
D Drain
S Source
Base Part Number AUIRLS8409-7P
Package Type D2Pak-7PIN
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Complete Part Number
AUIRLS8409-7P AUIRLS8409-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maxim...
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