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AUIRLS8409-7P

Infineon

Power MOSFET

  AUIRLS8409-7P Features  Advanced Process Technology  Logic Level Gate Drive  Ultra Low On-Resistance  175°C Opera...


Infineon

AUIRLS8409-7P

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Description
  AUIRLS8409-7P Features  Advanced Process Technology  Logic Level Gate Drive  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)     40V 0.50m 0.75m 500A 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Applications  Electric Power Steering (EPS)  Battery Switch  Start/Stop Micro Hybrid  Heavy Loads  DC-DC Converter G Gate D2Pak 7 Pin D Drain S Source Base Part Number AUIRLS8409-7P Package Type D2Pak-7PIN Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Complete Part Number AUIRLS8409-7P AUIRLS8409-7TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maxim...




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