Document
SMD Type
Transistors
PNP Silicon Transistor CZT5401
0.1max +0.050.90
-0.05
+0.151.65 -0.15
Features
SOT-223
6.50+0.2 -0.2
Unit: mm 3.50+0.2
-0.2
3.00+0.1 -0.1 4
0.90+0.2 -0.2
7.00+0.3 -0.3
123 2.9 4.6
0.70+0.1 -0.1
1 Base 2 Collector 3 Emitter 4 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
Electrical Characteristics Ta = 25
Symbol ICBO ICBO IEBO BVCBO BVCEO BVEBO
VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT)
hFE
fT Cob hfe NF
Testconditons VCB=100V VCB=100V, TA=150 VEB=3.0V IC=100ìA IC=1.0mA IE=10ìA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200mA, RS=10 Ù,f=10Hz to 15.7kHz
Symbol VCBO VCEO VEBO IC PD TJ,Tstg ÈJA
Rating 160 150 5 600 2
-65 to 150 62.5
Min Max Unit 50 nA 50 mA 50 nA
160 V 150 V 5.0 V
0.2 V 0.5 V 1.0 V 1.0 V 50 60 240 50 100 300 MHz 6.0 pF 40 200
8.0 dB
Unit V V V mA W /W
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