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FL14KM-9A Dataheets PDF



Part Number FL14KM-9A
Manufacturers Mitsubishi
Logo Mitsubishi
Description Nch POWER MOSFET
Datasheet FL14KM-9A DatasheetFL14KM-9A Datasheet (PDF)

FL14KM-9A MITMSIUTBSIUSBHIISNHcI hNPchOWPOEWR EMROMSFOESTFET FL14KFLM14-K9MA-9A HIGHHI-GSHP-ESEPDEESDWSITWCIHTICNHGINUGSEUSE OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 6.5 ± 0.3 15 ± 0.3 3 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 G 10V DRIVE G VDSS .... 450V G rDS (ON) (MAX) ..0.52Ω G ID ....

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FL14KM-9A MITMSIUTBSIUSBHIISNHcI hNPchOWPOEWR EMROMSFOESTFET FL14KFLM14-K9MA-9A HIGHHI-GSHP-ESEPDEESDWSITWCIHTICNHGINUGSEUSE OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 6.5 ± 0.3 15 ± 0.3 3 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 G 10V DRIVE G VDSS ............................................................................... 450V G rDS (ON) (MAX) ..............................................................0.52Ω G ID ......................................................................................... 14A APPLICATION SMPS, Inverter fluorescent light sets, etc. 2.54 ± 0.25 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.54 ± 0.25 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 ➀➁➂ ➁ ➀ GATE ➀ ➁ DRAIN ➂ SOURCE ➂ TO-220FN MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V L = 200µH Conditions AC for 1minute, Terminal to case Typical value Ratings 450 ±30 14 42 14 40 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-9A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter Test conditions V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω IS = 7A, VGS = 0V Channel to case Limits Unit Min. Typ. Max. 450 — —V ±30 — —V — — ±10 µA —— 1 mA 2.0 3.0 4.0 V — 0.40 0.52 Ω — 2.80 3.64 V — 8.0 — S — 1250 — pF — 150 — pF — 55 — pF — 25 — ns — 45 — ns — 250 — ns — 90 — ns — 1.5 2.0 V — — 3.13 °C/W Sep. 2001 .


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