KTA1664

RoHS KTA1664 KTA1664 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: -0.8 Collector-base voltage A OV(BR)CBO: -35 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency JCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions Ic=-1mA, IE=0 Ic=-10mA, IB=0 IE=-1mA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA IC=-500mA, IB=-20mA VCE=-1V, IC=-10mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz MIN TYP MAX UNIT -35 V -30 V -5 V -0.1 µA -0.1 µA 100 320 35 -0.7 V -0.5 -0.8 V 120 MHz 19 pF ECLASSIFICATION OF hFE(1) WRank O Y Range 100-200 160-320 Marking RO RY WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...