KTA1666

SEMICONDUCTOR TECHNICAL DATA KTA1666 EPITAXIAL PLANAR PNP TRANSISTOR 30Ω J BW E POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES ᴌLow Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.) ᴌPC=1ᴕ2W (Mounted on Ceramic Substrate) ᴌSmall Flat Package. ᴌComplementary to KTC4379. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC * Tj -50 -50 -5 -2 -0.4 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTA1666 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V A A mW W ᴱ ᴱ AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Type Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE (1) (Note2) hFE (2) VCE(sat) VBE(sat) fT Cob VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 VCE=-2V, IC=-0.5A (Note 1) VCE=-2V, IC=-1.5A (Note 1) IC=-1A, IB=-0.05A (Note 1) IC=-1A, IB=...