KTC4076

KTC4076 TRANSISTOR (NPN) FEATURES  Excellent hFE Linearity  Complementary to KTA2015 SOT–323 APPLICATIONS  General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current 500 PC Collector Power Dissipation 100 RΘJA Thermal Resistance From Junction To Ambient 1250 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCB=6V,IC=20mA , VCB=6V, IE=0, f=1MHz Min Typ 35 30 5 70 25 300 7 CLASSIFICATION OF hFE(1), hFE(2) RANK O RANG hFE(1) 70–140 hFE(2) 25Min MARKING WO Y 120–240 40Min WY Max 0.1 0.1 240 0.25 1 Unit V V V µA µA V V MHz pF JinYu semiconductor www.htsemi.com ...