RoHS KTC4347
KTC4373 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM:...
RoHS KTC4347
KTC4373
TRANSISTOR (
NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: 800 Collector-base voltage
mA
OV(BR)CBO:
120 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain
Collector-emitter saturation voltage
EBase-emitter voltage LTransition frequency ECollector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE
fT
Cob
Test conditions
Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=500mA VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
120 V 120 V
5V 0.1 µA 0.1 µA
80 240 1V 1V
120 MHz 30 pF
JCLASSIFICATION OF hFE ERank WRange
O 80-160
Y 120-240
Marking
CO
CY
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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