RoHS KTC4374
KTC4374 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM:...
RoHS KTC4374
KTC4374
TRANSISTOR (
NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: 400 Collector-base voltage
mA
OV(BR)CBO:
80 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency JCollector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE
fT
Cob
Test conditions
Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=80V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=200mA IC=200mA, IB=20mA VCE=2V, IC=5mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
80 V 80 V 5V
0.1 µA 0.1 µA 70 240 50 0.4 V 0.8 V 100 MHz 10 pF
ECLASSIFICATION OF hFE(1) WRank
O
Y
Range
70-140
120-240
Marking
EO
EY
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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