KTC4374

J BE E SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1662. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC* Tj 80 80 5 400 80 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTA1662 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W ᴱ ᴱ KTC4374 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification O:70ᴕ140, Y:120ᴕ240 TEST CONDITION VCB=80V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=2V, IC=50mA VCE=2V, IC=200mA IC=200mA, IB=20mA VCE=2V, IC=5mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz 1998. 6. 15 Revision No : 2 MIN. 80 70 50 - 0.55 - TYP. - 100 10 MAX. 100 100 240 0.4 0.8 - UNIT nA...