KTC4376

RoHS KTC4376 KTC4376 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: 800 Collector-base voltage mA OV(BR)CBO: 35 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency JCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=700mA IC=500mA, IB=20mA VCE=1V, IC=10mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz MIN TYP MAX UNIT 35 V 30 V 5V 0.1 µA 0.1 µA 100 320 35 0.5 V 0.8 V 120 MHz 13 pF ECLASSIFICATION OF hFE(1) WRank O Y Range 100-200 160-320 Marking PO PY WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...