KTD1898

SMD Type NPN Transistors KTD1898 Transistors ■ Features ● Small Flat Package ● General Purpose Application 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Rating 100 80 5 1 500 250 150 -55 to 150 Unit V A mW ℃/W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 1 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 80 V , IE= 0 IEBO VEB= 4V , IC=0 VCE(sat) IC=500 mA, IB=20mA VBE(sat) IC=500 mA, IB=20mA hFE VCE= 3V, IC= 500mA Cob VCB= 10V, IE= 0,f=1MHz fT VCE= 10V, IC= 50mA , f=100MHz Min Typ Max Unit 100 80 V 5 1 uA 1 0.4 V 1 70 400 20 pF 100 MHz ■ Classification of hfe Type KTD1898-O Range 70-140 Marking ZO KTD1898-Y 120-240 ZY KTD1898-G 200-400 ZG www.kexin.com.cn 1 ...