SBL2030PT thru SBL2045PT
Low VF Schottky Barrier Rectifiers
AC A
C(TAB)
A C A
A=Anode, C=Cathode, TAB=Cathode
SBL20...
SBL2030PT thru SBL2045PT
Low VF
Schottky Barrier Rectifiers
AC A
C(TAB)
A C A
A=Anode, C=Cathode, TAB=Cathode
SBL2030PT SBL2035PT SBL2040PT SBL2045PT
VRRM V 30 35 40 45
VRMS V 21
24.5 28 31.5
VDC V 30 35 40 45
Dimensions TO-247AD
Dim. Millimeter Min. Max.
A 19.81 20.32 B 20.80 21.46
C 15.75 16.26 D 3.55 3.65
E 4.32 5.49 F 5.4 6.2
G 1.65 2.13 H - 4.5
J 1.0 1.4 K 10.8 11.0
L 4.7 5.3 M 0.4 0.8
N 1.5 2.49
Inches Min. Max.
0.780 0.800 0.819 0.845
0.610 0.640 0.140 0.144
0.170 0.216 0.212 0.244
0.065 0.084 - 0.177
0.040 0.055 0.426 0.433
0.185 0.209 0.016 0.031
0.087 0.102
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD)
VF Maximum Forward Voltage At 10A DC (Note 1)
IR
Maximum DC Reverse Current At Rated DC Blocking Voltage
@TJ=25oC @TJ=100oC
CJ ROJC
TJ TSTG
Typical Junction Capacitance Per Element (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range
NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case.
Maximum Ratings 20
250
0.55 1 50
600 2.5 -55 to +125 -55 to +150
Unit A
A
V
mA
pF oC/W
oC oC
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For...