TSS0230LU

Small Signal Product TSS0230LU Taiwan Semiconductor Surface Mount Schottky Barrier Diode FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - Low capacitance - Low forward voltage drop - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: 0603-B - Terminal: Gold plated, solderable per MIL-STD-750, method 2026 - Polarity : Indicated by cathode band - Weight : 0.003 g (approximately) - Marking code: BA 0603-B MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Repetitive Peak Reverse Voltage VRRM 35 DC Reverse Voltage VR 30 Average Forward Current IO 200 Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rate Load IFSM 1.0 Power Dissipation Forward Voltage @ IF=200mA Reverse Leakage Current Junction Temperature Storage Temperature VR=10V Pd VF IR TJ TSTG 150 0.5 30 -40 to +125 -40 to +125 UNIT V V mA A mW V μA oC oC Document Number: DS_S1412031 Version: B14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Forward current (mA) 1000 Fig.1 Forward Characteristics 100 10 125ﾟC 75ﾟC 1 25ﾟC -25ﾟC 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward Voltage(V) Fig. 3 Capacitance Between Terminals Characteristics 100 f = 1MHz 10 Capacitance Between Terminals (pF) 1 0 5 10 15 20 25 30 Reverse Voltage (V) Average Forward Current (mA) Reverse Current (A) TSS0230LU Taiwan Semic...