S-LRB461WT1G

LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB461WT1G zApplications 1) Low-power rectification 2) For switching power supply zFeatures 1) Small mold type. (SC-7 0) 2) Ultra low VF. (VF=0.45V Typ. at 0.7A) 3) IF=0.7A guaranteed despite the size. 4) S- Prefix for Automotive and O ther Applications Req uiring Uniq ue Site and Control Change Req uirements; AEC-Q 101 Q ualified and PPAP Capable. zConstruction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage DC forward current Peak forward surge current Junction temperature Storage temperature ∗ 60Hz for 1 Symbol VRM VR IF ∗IFSM Tj Tstg zElectrical characteristics (Ta = 25°C) Limits 25 20 0.7 3 125 −40∼+125 Unit V V A A ˚C ˚C Parameter Symbol Min. Forward voltage VF − Reverse current IR − Note) ESD sensitive product handling required. Typ. − − Max. 0.49 200 Unit Conditions V IF=0.7A µA VR=20V z Device marking and ordering information Device LRB461WT1G S-LRB461WT1G LRB461WT1G S-LRB461WT1G Marking 3B 3B Shipping 3000/Tape&Reel 10000/Tape&Reel LRB461WT1G S-LRB461WT1G 3 1 2 SOT–323 /SC–70 3 CATHODE 1 ANODE 1/3 FORWARD CURRENT : IF (A) Ta=7152˚5C˚C 25˚C −25˚C REVERSE CURRENT : IR (mA) LESHAN RADIO COMPANY, LTD. LRB461WT1G , S-LRB461WT1G Electrical characteristic curves (Ta = 25°C) 10 1 100m 10m 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 FORWARD VOLTAGE : VF (V) 0.6 F...