LRB550V-30T1G

LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB550V-30T1GG zApplications G eneral rectification zFeatures 1) Small surface mounting type. 2) L ow VF, L ow I R 3) High reliability. 4 ) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zConstruction Silicon epitaxial planar zDevice Marking and Ordering Information Device LRB550V-30T1G S-LRB550V-30T1G LRB550V-30T3G S-LRB550V-30T3G Marking SD SD Shipping 3000/Tape&Reel 10000/Tape&Reel LRB550V-30T1G S-LRB550V-30T1G 1 2 SOD– 323 1 CATHODE 2 ANODE zAbsolute maximum ratings (Ta = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg ∗ 60Hz for 1 Limits 30 30 0.5 2 150 -40 to +150 Unit V V A A ℃ ℃ zElectrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - Typ. Max. - 0.39 - 0.6 0 - 30 Unit Conditions V IF=100mA V IF=700mA µA VR=10V Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LRB550V-30T1G , S-LRB550V-30T1G zElectrical characteristic curves (Ta = 25°C) 10A 100m 1A 10m 125˚C 1000.0 IF (A) IR (A) Ct (pF) 100m 10m 1m 125˚C 75˚C 25˚C −25˚C 1m 100µ 10µ 1µ 75˚C 25˚C −25˚C 100.0 10.0 100µ 0.0 0.1 0.2 0.3 0.4 0.5 VF (V) Fig.1 Forward characteristics 1...