LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB550V-30T1GG
zApplications G eneral rectification
zFeatures 1) S...
LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB550V-30T1GG
zApplications G eneral rectification
zFeatures 1) Small surface mounting type.
2) L ow VF, L ow I R
3) High reliability.
4 ) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zConstruction Silicon epitaxial planar
zDevice Marking and Ordering Information
Device
LRB550V-30T1G S-LRB550V-30T1G
LRB550V-30T3G S-LRB550V-30T3G
Marking SD SD
Shipping 3000/Tape&Reel
10000/Tape&Reel
LRB550V-30T1G S-LRB550V-30T1G
1
2
SOD– 323
1
CATHODE
2
ANODE
zAbsolute maximum ratings (Ta = 25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
∗ 60Hz for 1
Limits 30 30 0.5 2 150
-40 to +150
Unit V V A A ℃ ℃
zElectrical characteristics (Ta = 25°C)
Parameter Forward voltage Reverse current
Symbol VF1 VF2 IR
Min. -
Typ. Max. - 0.39 - 0.6 0 - 30
Unit Conditions
V IF=100mA V IF=700mA µA VR=10V
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LRB550V-30T1G , S-LRB550V-30T1G
zElectrical characteristic curves (Ta = 25°C)
10A 100m
1A 10m
125˚C
1000.0
IF (A) IR (A) Ct (pF)
100m 10m 1m
125˚C 75˚C 25˚C
−25˚C
1m 100µ 10µ
1µ
75˚C 25˚C −25˚C
100.0 10.0
100µ 0.0 0.1 0.2 0.3 0.4 0.5 VF (V)
Fig.1 Forward characteristics
1...