LSI1012XT1G

LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G S-LSI1012XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers ORDERING INFORMATION Device Marking Shipping LSI1012XT1G A 3000/Tape&Reel S-LSI1012XT1G LSI1012XT3G S-LSI1012XT3G A 10000/Tape&Reel SC-89 Gate 1 3 Drain Source 2 (Top View) M MARKING DIAGRAM 3 A 12 A = Specific Device Code M = Month Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 Maximum Power Dissipationb for SC-89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) TA = 25_C TA = 85_C TA = 25_C TA = 85_C TA = 25_C TA = 85_C VDS VGS ID IDM IS PD T...