S-LSI1013LT1G

LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers 3 1 2 SOT-23 Gate 1 3 Drain Source 2 (Top View) MARKING DIAGRAM 3 ORDERING INFORMATION Device LSI1013LT1G S-LSI1013LT1G LSI1013LT3G S-LSI1013LT3G Marking Shipping A1 3000/Tape&Reel A1 10000/Tape&Reel A1 12 A1 = Specific Device Code M = Month Code M ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b TA = 25_C TA = 85_C VDS VGS ID IDM IS -400 -300 -275 -20 "6 -1000 -350 -275 -250 Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) PD TJ, Tstg ESD 225 −55 to 150 2000 ...