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V60D120C Dataheets PDF



Part Number V60D120C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V60D120C DatasheetV60D120C Datasheet (PDF)

www.vishay.com V60D120C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • .

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www.vishay.com V60D120C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 120 V IFSM 320 A VF at IF = 30 A (TA = 125 °C) TJ max. 0.70 V 150 °C Package SMPD (TO-263AC) Circuit configuration Common cathode MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG V60D120C 120 60 30 320 10 000 -40 to +150 UNIT V A A V/μs °C Revision: 27-Mar-2020 1 Document Number: 87953 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V60D120C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Instantaneous forward voltage per diode Reverse current at rated VR per diode IF = 5 A IF = 15 A IF = 30 A IF = 5 A IF = 15 A IF = 30 A VR = 90 V VR = 120 V TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF (1) IR (2) Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms TYP. 0.48 0.68 0.91 0.39 0.59 0.70 14 11 27 MAX. 0.96 0.76 800 75 UNIT V μA mA μA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V60D120C per diode 1.8 Typical thermal resistance per device RθJC 0.95 per device RθJA (1)(2) 45 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA (2) Free air, without heatsink UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) SMPD (TO-263AC) V60D120C-M3/I 0.55 SMPD (TO-263AC) V60D120CHM3/I (1) 0.55 Note (1) AEC-Q101 qualified PACKAGE CODE BASE QUANTITY DELIVERY MODE I 2000/reel 13" diameter plastic tape and reel I 2000/reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Average Power Loss (W) 60 50 40 30 20 10 0 0 RthJC = 0.95 °C/W RthJA = 45 °C/W 25 50 75 100 125 150 Case Temperature (°C) 28 24 20 16 12 8 4 0 0 D = 0.5 D = 0.3 D = 0.2 D = 0.8 D = 1.0 D = 0.1 T D = tp/T tp 5 10 15 20 25 30 35 Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 27-Mar-2020 2 Document Number: 87953 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 2nd line Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C 10000 10 TJ = 125 °C 1 TJ = 100 °C TJ = 25 °C 1000 100 0.1 0 TJ = -40 °C 0.2 0.4 0.6 0.8 1.0 Instantaneous Forward Voltage (V) 10 1.2 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Axis Title 100 10000 10 1 TJ = 100 °C TJ = 125 °C TJ = 150 °C 1000 0.1 0.01 0.001 20 100 TJ = 25 °C TJ = -40 °C 10 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode 10 000 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Thermal Resistance .


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