Schottky Rectifier. VB60100C Datasheet

VB60100C Rectifier. Datasheet pdf. Equivalent

VB60100C Datasheet
Recommendation VB60100C Datasheet
Part VB60100C
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Feature VB60100C; www.vishay.com VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky.
Manufacture Vishay
Datasheet
Download VB60100C Datasheet




Vishay VB60100C
www.vishay.com
VB60100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB)
K
2
1
VB60100C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
100 V
IFSM
VF at IF = 30 A
TJ max.
Package
320 A
0.66 V
150 °C
D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
VB60100C
100
60
30
320
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 20-Jun-2018
1 Document Number: 87988
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB60100C
www.vishay.com
VB60100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
per diode (1)
Reverse current at rated VR
per diode (2)
IF = 5 A
IF = 10 A
IF = 15 A
IF = 20 A
IF = 30 A
IF = 5 A
IF = 10 A
IF = 15 A
IF = 20 A
IF = 30 A
VR = 80 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF
IR
0.45
0.52
0.58
0.63
0.73
0.36
0.45
0.53
0.58
0.66
24
13
65
30
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
0.63
-
0.79
-
-
0.58
-
0.70
500
20
1000
-
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
VB60100C
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VB60100C-M3/4W
1.38
TO-263AB
VB60100C-M3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
Revision: 20-Jun-2018
2 Document Number: 87988
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay VB60100C
www.vishay.com
VB60100C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
70
Resistive or Inductive Load
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1000
100 TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
30
D = 0.8
25 D = 0.5
D = 0.3
20
D = 0.2
15
D = 0.1
10
D = 1.0
T
5
D = tp/T
tp
0
0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 20-Jun-2018
3 Document Number: 87988
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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