Switching Diode
Data Sheet
Switching Diode
1SS400SM
lApplications High frequency switching
lDimensions (Unit : mm)
0.8±0.05
0.12±0.0...
Description
Data Sheet
Switching Diode
1SS400SM
lApplications High frequency switching
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
lLand size figure (Unit : mm) 0.8
1.2±0.05 1.6±0.1
0.6 1.7
lFeatures 1)Ultra small mold type. (EMD2) 2)High reliability
lConstruction Silicon epitaxial
0.3±0.05
ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79
dot (year week factory)
lTaping specifications (Unit : mm)
0.6±0.1
EMD2 lStructure
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Forward voltage(repetitive peak) Average rectified forward current
VRM VR IFM Io
Surge current(t=1s) Junction temperature
Isurge Tj
Storage temperature
Tstg
Limits 90 80 225 100 500 150
-55 to +150
Unit V V mA mA mA °C °C
lElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage Reverse current Capacitance between terminals
VF IR Ct
-
- 1.2 - 0.1 -3
Reverse recovery time
trr - - 4
Unit Conditions
V IF=100mA μA VR=80V pF VR=0.5V , f=1MHz ns VR=6V , IF=10mA , RL=100Ω
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1/3
2011.06 - Rev.A
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
1SS400SM
Data Sheet
100
10000
Ta=125℃
10
1 Ta=125℃
0.1
Ta=75℃ Ta=25℃ Ta=-25℃
0.01 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE:VF(V) VF-IF CHARACTERISTICS
1
REVERSE CURRENT:IR(nA)
1000 100 10 1
Ta=75℃ Ta=25℃ Ta=-25℃
0.1 0
10 20 30 40 50 60 70 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
80
CAPACITANCE BETWEEN T...
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