N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP02N60I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avala...
Description
Advanced Power Electronics Corp.
AP02N60I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test ▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
G
S
Description
AP02N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
BVDSS
RDS(ON) ID4
600V 8Ω 2A
G DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
600 +30
2 1.26 3.6 22 80 -55 to 150 -55 to 150
V V A A A W mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 5.7 65
Unit ℃/W ℃/W
1 201502255
AP02N60I-HF
El...
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