AP02N90JB

Advanced Power Electronics Corp. AP02N90JB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement D ▼ RoHS Compliant & Halogen-Free G Description S AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 900V 7.2Ω 1.9A GDS TO-251S Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 900 V VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy2 +30 V 1.9 A 1.2 A 6A 62.5 W 1.13 W 18 mJ IAR TSTG TJ Avalanche Current Storage Temperature Range Operating Junction Temperature Range 1.9 -55 to 150 -55 to 150 A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 2 110 Units ℃/W ℃/W 1 201505271 AP02N90JB Electrical Characteristics@Tj=25oC(unless otherw...