N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP04N60J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avala...
Description
Advanced Power Electronics Corp.
AP04N60J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP04N60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications.
BVDSS RDS(ON) ID
620V 2.5Ω
4A
G D S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy3
620 V +30 V
4A 2.2 A 15 A 59.5 W 8 mJ
IAR TSTG TJ
Avalanche Current Storage Temperature Range Operating Junction Temperature Range
4 -55 to 150 -55 to 150
A ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 2.1 110
Units ℃/W ℃/W
1 201501082
AP04N60J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test C...
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