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AP0103GP-HF Dataheets PDF



Part Number AP0103GP-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP0103GP-HF DatasheetAP0103GP-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP0103GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP0103 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power appli.

  AP0103GP-HF   AP0103GP-HF



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Advanced Power Electronics Corp. AP0103GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP0103 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS@Tj=125oC RDS(ON) ID 40V 2.99mΩ 220A G D S TO-220(P) Absolute Maximum Ratings Symbol Parameter VDS@Tj=125oC VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V3 Pulsed Drain Current1 PD@TC=25℃ PD@TA=25℃ TSTG TJ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 40 +20 220 80 80 320 250 2 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 0.5 62 Units ℃/W ℃/W 1 201304121 AP0103GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.5V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=32V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=32V VGS=4.5V VDS=20V ID=40A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz 38 - - V - - 2.99 mΩ - - 4.2 mΩ 1 - 3V - 108 - S - - 25 uA - - +100 nA - 30 48 nC - 2.3 - nC - 20 - nC - 10 - ns - 80 - ns - 40 - ns - 85 - ns - 2760 4410 pF - 605 - pF - 210 - pF - 1.4 2.8 Ω Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=40A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 32 - ns - 24 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMIL.


AP0103GMT-HF AP0103GP-HF CSP0201


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