Document
Advanced Power Electronics Corp.
AP0103GP-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
AP0103 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS@Tj=125oC
RDS(ON) ID
40V 2.99mΩ
220A
G D S
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
VDS@Tj=125oC VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip) Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V3 Pulsed Drain Current1
PD@TC=25℃ PD@TA=25℃ TSTG TJ
Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating 40 +20 220 80 80 320 250 2
-55 to 150 -55 to 150
Units V V A A A A W W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 0.5 62
Units ℃/W ℃/W
1 201304121
AP0103GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=40A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=32V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=32V VGS=4.5V VDS=20V ID=40A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz
38 - - V
- - 2.99 mΩ
- - 4.2 mΩ
1 - 3V
- 108 -
S
- - 25 uA
- - +100 nA
- 30 48 nC
- 2.3 - nC
- 20 - nC
- 10 - ns
- 80 - ns
- 40 - ns
- 85 - ns
- 2760 4410 pF
- 605 - pF
- 210 - pF
- 1.4 2.8 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2 trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 32 - ns - 24 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMIL.