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MMBT2222ALP4 Dataheets PDF



Part Number MMBT2222ALP4
Manufacturers Diodes
Logo Diodes
Description NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Datasheet MMBT2222ALP4 DatasheetMMBT2222ALP4 Datasheet (PDF)

MMBT2222ALP4 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Low Collector-Emitter Saturation Voltage, VCE(sat) • Ultra-Small Leadless Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: X2-DFN1006-3 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Lev.

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MMBT2222ALP4 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Low Collector-Emitter Saturation Voltage, VCE(sat) • Ultra-Small Leadless Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: X2-DFN1006-3 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 • Weight: 0.0009 grams (Approximate) X2-DFN1006-3 Bottom View C B E Device Symbol B C E Top View Device Schematic Ordering Information (Note 4) Product MMBT2222ALP4-7B Marking 2S Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 2S Top View 2S = Product Type Marking Code Bar Denotes Base and Emitter Side MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 1 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT2222ALP4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Symbol VCBO VCEO VEBO IC ICM Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Lead (Note 7) Operating and Storage Temperature Range Symbol PD PD RθJA RθJA RθJL TJ, TSTG Value 75 40 6 600 800 Value 460 1 272 120 110 -55 to +150 Unit V V V mA mA Unit mW W °C/W °C/W °C/W °C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol ESD HBM ESD MM Value ≥ 8,000 ≥ 400 Unit JEDEC Class V 3B VC Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 2 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT2222ALP4 Thermal Characteristics r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.000001 0.0001 1,000 RθJA(t) = r(t) * RθJA RθJA = 272°C/W Duty Cycle, D = t1/ t2 0.01 1 t1, PULSE DURATION TIME (sec) Figure 1 Transient Thermal Resistance 0.5 100 10,000 100 10 Single Pulse RθJA = 272°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 0.4 0.3 0.2 PD, POWER DISSIPATION (W) 1 0.1 RθJA = 272°C/W P(PK), PEAK TRANSIENT POIWER (W) 0.1 1E-06 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (sec) Figure 2 Single Pulse Maximum Power Dissipation 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Figure 3 Power Dissipation vs. Ambient Temperature MMBT2222ALP4 Document number: DS35506 Rev. 3 - 2 3 of 7 www.diodes.com August 2012 © Diodes Incorporated MMBT2222ALP4 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS (Note 6) Output Capacitance Input Capacitance Current Gain-Bandwidth Product Noise Figure Symbol Min Typ BVCBO BVCEO BVEBO ICEX ICBO IEBO IBL hFE VCE(sat) VBE(sat) 75 40 6 ⎯ ⎯ ⎯ ⎯ ⎯ 35 50 75 35 100 50 40 ⎯ ⎯ 0.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Cobo Cibo fT NF ⎯⎯ 300 ⎯ ⎯⎯ Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance SWICHING CHARACTERISTICS (Note 6) Delay Time Rise Time Storage Time Fall Time hie 0.25 hre ⎯ hfe 75 hoe 25 td ⎯ tr ⎯ ts ⎯ tf ⎯ Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty.


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