Document
MMBT2222ALP4
40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Low Collector-Emitter Saturation Voltage, VCE(sat) • Ultra-Small Leadless Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3 • Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4 • Weight: 0.0009 grams (Approximate)
X2-DFN1006-3 Bottom View
C B
E Device Symbol
B C
E
Top View Device Schematic
Ordering Information (Note 4)
Product MMBT2222ALP4-7B
Marking 2S
Reel size (inches) 7
Tape width (mm) 8
Quantity per reel 10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2S
Top View
2S = Product Type Marking Code Bar Denotes Base and Emitter Side
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
1 of 7 www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current
Symbol VCBO VCEO VEBO IC ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Power Dissipation (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Lead (Note 7) Operating and Storage Temperature Range
Symbol PD PD RθJA RθJA RθJL
TJ, TSTG
Value 75 40 6 600 800
Value 460 1 272 120 110
-55 to +150
Unit V V V mA mA
Unit mW W °C/W °C/W °C/W °C
ESD Ratings (Note 8)
Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model
Symbol ESD HBM ESD MM
Value ≥ 8,000 ≥ 400
Unit JEDEC Class V 3B VC
Notes:
5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
2 of 7 www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
Thermal Characteristics
r(t), TRANSIENT THERMAL RESISTANCE
1 D = 0.9
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001 0.000001
0.0001
1,000
RθJA(t) = r(t) * RθJA RθJA = 272°C/W Duty Cycle, D = t1/ t2
0.01
1
t1, PULSE DURATION TIME (sec)
Figure 1 Transient Thermal Resistance
0.5
100
10,000
100 10
Single Pulse
RθJA = 272°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t)
0.4 0.3 0.2
PD, POWER DISSIPATION (W)
1 0.1 RθJA = 272°C/W
P(PK), PEAK TRANSIENT POIWER (W)
0.1 1E-06 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (sec)
Figure 2 Single Pulse Maximum Power Dissipation
0 0 50 100 150 200
TA, AMBIENT TEMPERATURE (°C) Figure 3 Power Dissipation vs. Ambient Temperature
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2
3 of 7 www.diodes.com
August 2012
© Diodes Incorporated
MMBT2222ALP4
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS (Note 6) Output Capacitance Input Capacitance Current Gain-Bandwidth Product Noise Figure
Symbol Min Typ
BVCBO BVCEO BVEBO
ICEX ICBO IEBO IBL
hFE
VCE(sat) VBE(sat)
75 40 6 ⎯ ⎯ ⎯ ⎯ ⎯
35 50 75 35 100 50 40 ⎯ ⎯ 0.6 ⎯
⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
Cobo Cibo fT
NF
⎯⎯
300 ⎯ ⎯⎯
Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance SWICHING CHARACTERISTICS (Note 6) Delay Time Rise Time Storage Time Fall Time
hie 0.25 hre ⎯ hfe 75 hoe 25
td ⎯ tr ⎯ ts ⎯ tf ⎯
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty.