Thyristor-Thyristor Module
Naina Semiconductor Ltd.
NTT172C
Features
Thyristor-Thyristor Module, 175 Amps
• Improved glass passivation for high...
Description
Naina Semiconductor Ltd.
NTT172C
Features
Thyristor-Thyristor Module, 175 Amps
Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type number
Voltage Code
VRRM, Maximum repetitive peak reverse voltage
VRSM, Maximum nonrepetitive peak reverse
voltage
NTT172C
60 80 100 120 140 160 180
(V) 600 800 1000 1200 1400 1600 1800
(V) 700 900 1100 1300 1500 1700 1900
VDRM, Maximum repetitive peak off-
state voltage
(V) 600 800 1000 1200 1400 1600 1800
IRRM, Maximum reverse leakage current @ TJMAX
(mA)
20
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Symbol
Maximum average forward current @ TJ = 850C
IT(AV)
Maximum average RMS forward current
IT(RMS)
Maximum non-repetitive surge current Maximum I2t for fusing
ITSM I2t
Forward voltage drop
VTM
Critical rate of rise of on-state current
di/dt
Critical rate of rise of off-state voltage
dv/dt
Gate current required to trigger
IGT
Gate voltage required to trigger
VGT
Maximum holding current
IH
Maximum latching current
IL
Isolation voltage
VISO
Values 175 275 5400
145800 1.4 200 1000 150 2 150 300 3000
Units A A A A2s V
A/µs V/µs mA
V mA mA V
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
TJ
Storage temperature
Tstg
Thermal resistance, junct...
Similar Datasheet