XD1001-BD

XD1001-BD Distributed Amplifier 18-50 GHz Features  Ultra Wide Band Driver Amplifier  Fiber Optic Modulator Driver  17.0 dB Small Signal Gain  5.0 dB Noise Figure  30 dB Gain Control  +15.0 dBm P1dB Compression Point  100% On-Wafer RF, DC and Output Power Testing  100% Visual Inspection to MIL-STD-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications. Ordering Information Part Number Package XD1001-BD-000V “V” - vacuum release gel paks XD1001-BD-EV1 evaluation module Chip Device Layout Rev. V1 Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)1 +6.0 VDC 220 mA +0.3 V +15 dBm -65 ºC to +165 ºC -55 ºC to +85 ºC +175 ºC (1) Cha...