XF1001-SC

DC-6.0 GHz 1.0W Packaged HFET April 2010 - Rev 05-Apr-10 Features 46.5 dBm OIP3 @ 5.8 GHz 15.5 dB Gain @ 2 GHz 10.0 dB Gain @ 6 GHz 30.0 dBm P1dB SOT-89 Package General Description The XF1001-SC is a high linearity Hetrojunction Field Effect Transistor (HFET) housed in an industry standard SOT-89 package. Optimum performance is achieved when the device is biased at a drain voltage of 8V and drain current of 300m. At this bias point, the device is capable of more than 30 dBm of P1dB and OIP3 of more than 46 dBm. The XF1001-SC is suitable for applications up to 6 GHz where it has 10 dB of gain. Typical Performance: 8V, 25 ºC Parameter Typical Units Frequency (F) 1900 Gain (S21) 15.5 Ourput IP3 (OIP3) 46.5 Output P1dB 30.0 Quiescent Current (Idq) 300 Input Return Loss (S11) -12.5 Output Return Loss (S22) -7.5 Noise Figure (NF) 4.5 5800 10.1 46.5 30.0 300 -22.5 -7.5 5.0 MHz dB dBm dBm mA dB dB dB P1dB at 5900 MHz can be improved to over 30 dBm at the expense of gain. F1001-SC Functional Block Diagram Absolute Maximum Ratings Device Voltage (Vcc) +9.0 V Current (Icc) 450 mA Power Dissipation (PDC) 4.5W RF Input Power (RFin) +24 dBm Junction Temperature 175 ºC Thermal Resistance 30 ºC/W Storage Temperature (Tstg) -55 ºC to +150 ºC Operating Temperature -40 ºC to +85 ºC ESD (HBM) Class 1A Moisture Sensitivity Level (MSL) MSL 1 Operation of this device beyond any of these parameters may cause permanent damage. Electrical Characteristics (T=25...