INJ0011AU1

ＩＮJ0011AＸ SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION INJ0011AＸ is a Silicon P-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance. FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=-1.0～-2.0V ・Low on Resistance. RDS(on)=7.0Ω(TYP)＠ID=-100mA, VGS=-4.0V RDS(on)=4.8Ω(TYP)＠ID=-100mA, VGS=-10V ・High speed switching. ・Small package for easy mounting. 0.5 1.2 0.8 0.4 0.4 OUTLINE DRAWING INJ0011AT2(PRELIMINARY) 0.2 0.8 0.2 Unit：mm INJ0011AM1 2.1 0.425 1.25 0.425 0.25 2.0 1.3 0.65 0.65 0.3 ① ②③ ① ②③ 0.9 0.7 0～0.1 0.15 APPLICATION High speed switching , Analog switching www.DataSheet4U.com EQUIVALENT CIRCUIT D G S JEITA, JEDEC：－ ISAHAYA：T-USM TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN INJ0011AU1 1.6 0.4 0.8 0.4 ① ②③ JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN INJ0011AC1 2.5 0.5 1.5 0.5 ① ②③ 1.6 1.0 0.5 0.5 0.3 2.9 1.90 0.95 0.95 0.4 0.7 0.55 0～0.1 0.15 1.1 0.8 0～0.1 0.16 JEITA：SC-75A JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN JEITA：SC-59 JEDEC：Similar to TO-236 T TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN ISAHAYA ELECTRONICS CORPORATION ＩＮJ0011AＸ SERIES High speed switching Silicon P-channel MOSFET MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL PARAMETER ＶDSS ＶGSS ＩD ＰＤ Ｔch Ｔｓｔｇ Drain-source voltage Gate-source voltage Drain current Total p...