Low Noise Amplifier
XL1002-BD
Low Noise Amplifier 20.0-36.0 GHz
Features
Balanced Design Excellent Input/Output Match Self-biased Arch...
Description
XL1002-BD
Low Noise Amplifier 20.0-36.0 GHz
Features
Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure
Testing 100% Visual Inspection to MIL-STD-883 Method
2010 RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 23.0 dB with a noise figure of 2.6 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Ordering Information
Part Number
Package
XL1002-BD-000V
“V” - vacuum release gel paks
XL1002-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Absolute Max.
Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)1
+6.0 VDC 120 mA +15.0 dBm -65 °C to +165 °C -55 °C to +85 °C +175 °C
1. Channel temperature directly affects a device's MTTF. Chan-
nel temperature should be kept as low as possible to maximize lifetime...
Similar Datasheet