17.0-26.0 GHz GaAs MMIC Power Amplifier
August 2007 - Rev 08-Aug-07
Features
Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
P1013-BD Chip Device Layout
XP1013-BD
General ...
