XX1007-QT

XX1007-QT Doubler 13.5-17.0/27.0-34.0 GHz Features  Integrated Gain, Doubler and Driver Stages  Single Positive Supply, +5V  Integrated Bypassing Capacitor  +20.0 dBm Output Saturated Power  35.0 dBc Fundamental Suppression  On-Chip ESD Protection  100% RF, DC and Output Power Testing  3x3mm QFN Package  RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The XX1007-QT has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external components. This device uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XX1007-QT has integrated ESD structures for protection and comes in a low cost 3x3mm QFN package. The device is well suited for Millimeter wave Point-toPoint Radio, LMDS, SATCOM and VSAT applications. Ordering Information Part Number XX1007-QT-0G00 XX1007-QT-0G0T XX1007-QT-EV1 Package bulk quantity tape and reel evaluation board Functional Block Diagram Rev. V1 Pin Configuration Pin No. Function Pin No. 3 RF In 1,2,4,5,6,7,8,9 10 RF Out 11,12,14,15,16 13 Vd Function NC NC Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 300 mA Gate Bias Voltage (Vg) ...