CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility...
CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The
transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package.
PackaPgNe’sT:yCpeGsH: 4404000260S3
FEATURES
Up to 6 GHz Operation 13 dB Small Signal Gain at 2.0 GHz 11 dB Small Signal Gain at 6.0 GHz 8 W typical at PIN = 32 dBm 65 % Efficiency at PIN = 32 dBm 28 V Operation 3mm x 3mm Package
APPLICATIONS
2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Rev 3.0 – May 2015
Subject to change without notice. www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25˚C
Storage Temperature
TSTG -65, +150
˚C
Operating Junction Temperature
TJ 175 ˚C
Maximum Forward Gate Current
IGMAX
2.1
mA 25˚C
Maximum Drain Current1
IDMAX
0.75
A
25˚C
Soldering Temperature2
TS 260 ˚C
Thermal Resistance, Junctio...
