CGH31240F

CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3414204200F1 Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz Output Power 243 249 249 245 3.1 GHz 243 Gain 11.9 11.9 11.9 11.9 11.9 Power Added Efficiency 60 61 60 59 52 Note: Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm. Units W dB % Features 2.7 - 3.1 GHz Operation 12 dB Power Gain 60 % Power Added Efficiency < 0.2 dB Pulsed Amplitude Droop Rev 2.0 – May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Pulse Width PW 1 Duty Cycle DC 50 Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS PDISS TSTG TJ IGMAX IDMAX TS τ 120 -10, +2 345 -65, +150 225 60 24 245 40 Pulsed Thermal Resistance, Junction to Case3 RθJC 0.5 Cas...