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CGH35240F Dataheets PDF



Part Number CGH35240F
Manufacturers Cree
Logo Cree
Description GaN HEMT
Datasheet CGH35240F DatasheetCGH35240F Datasheet (PDF)

CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3454204200F1 Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of De.

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CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3454204200F1 Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz Output Power 250 240 225 225 3.5 GHz 220 Gain 12.1 11.9 11.6 11.5 11.4 Power Added Efficiency 60 59 57 52 Note: Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm. 48 Units W dB % Features • 3.1 - 3.5 GHz Operation • 240 W Typical Output Power • 11.6 dB Power Gain at PIN = 42.0 dBm • 57 % Typical Power Added Efficiency • 50 Ohm Internally Matched • <0.2 dB Pulsed Amplitude Droop Rev 3.0 – December 2015 Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Pulse Width Symbol PW Rating 1 Duty Cycle DC 50 Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS PDISS TSTG TJ IGMAX IDMAX TS τ 120 -10, +2 345 -65, +150 225 60 24 245 40 Pulsed Thermal Resistance, Junction to Case3 RθJC 0.5 Case Operating Temperature3 TC -40, +150 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH35240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%. Electrical Characteristics (TC = 25˚C) Units ms % Volts Volts Watts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C Conditions 25˚C 25˚C 25˚C 25˚C 85˚C Characteristics DC Characteristics1 Symbol Min. Typ. Gate Threshold Voltage VGS(th) -3.8 Gate Quiescent Voltage VGS(Q) – Saturated Drain Current2 IDS 46.4 Drain-Source Breakdown Voltage VBR 120 RF Characteristics3 (TC = 25˚C, F0 = 3.1-3.5 GHz unless otherwise noted) Output Power1 at 3.1 GHz POUT 210 Output Power2 at 3.3 GHz POUT 200 Output Power3 at 3.5 GHz POUT 180 Power Added Efficiency1 at 3.1 GHz PAE 48 Power Added Efficiency2 at 3.3 GHz PAE 48 Power Added Efficiency3 at 3.5 GHz PAE 40 Power Gain1 at 3.1 GHz GP 11.0 Power Gain2 at 3.3 GHz GP 10.8 Power Gain3 at 3.5 GHz GP 10.5 Small Signal Gain S21 11.4 -3.0 -2.7 56.0 – 250 225 220 60 57 48 12.0 11.5 11.5 14 Input Return Loss S11 – -9 Output Return Loss S22 – -10 Pulsed Amplitude Droop D – 0.1 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH35240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%. Max. -2.3 – – – – – – – – – – – – – -4.5 -4.5 – Units Conditions VDC VDS = 10 V, ID = 57.6 mA VDC VDS = 28 V, ID = 1.0 A A VDS = 6.0 V, VGS = 2.0 V VDC VGS = -8 V, ID = 57.6 mA W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm dB VDD = 28 V, IDQ = 1.0 A Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH35240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Magnitude (dB) Gain and Return Losses vs Frequency Measured in CGH35240-AMP Amplifier Circuit. TyVpDicSa=l S2p8arVa,mIeDtSe=r 1 A 20 Gain (dB) 15 10 5 ORL (dB) 0 -5 -10 IRL (dB) -15 -20 -25 -30 2000 S21 S11 S22 2200 2400 2600 2800 3000 3200 Frequency (MHz) 3400 3600 3800 4000 Typical Pulsed Output Power and Power Gain vs Frequency Measured in CGH35240-AMP Amplifier Circuit. VDS = 28 V, IDS = 1 A, PIN = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20% 260 16 250 15 240 14 230 13 220 12 210 11 200 10 190 Pout (W) 180 Power Gain (dB) 170 9 8 7 160 3000 3100 3200 3300 Frequency (MHz) 3400 3500 6 3600 Output Power (W) Gain (dB) Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH35240F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typic.


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