Document
CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3454204200F1
Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.2 GHz
3.3 GHz
3.4 GHz
Output Power
250 240 225 225
3.5 GHz 220
Gain
12.1
11.9
11.6
11.5
11.4
Power Added Efficiency
60
59
57
52
Note: Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
48
Units W dB %
Features
• 3.1 - 3.5 GHz Operation • 240 W Typical Output Power • 11.6 dB Power Gain at PIN = 42.0 dBm • 57 % Typical Power Added Efficiency • 50 Ohm Internally Matched • <0.2 dB Pulsed Amplitude Droop
Rev 3.0 – December 2015
Subject to change without notice. www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Pulse Width
Symbol PW
Rating 1
Duty Cycle
DC 50
Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque
VDSS VGS PDISS TSTG TJ IGMAX IDMAX TS
τ
120 -10, +2
345 -65, +150
225 60 24 245 40
Pulsed Thermal Resistance, Junction to Case3
RθJC
0.5
Case Operating Temperature3
TC -40, +150
Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH35240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%.
Electrical Characteristics (TC = 25˚C)
Units ms % Volts Volts Watts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C
Conditions
25˚C 25˚C
25˚C 25˚C
85˚C
Characteristics DC Characteristics1
Symbol
Min.
Typ.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
–
Saturated Drain Current2
IDS 46.4
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics3 (TC = 25˚C, F0 = 3.1-3.5 GHz unless otherwise noted)
Output Power1 at 3.1 GHz
POUT
210
Output Power2 at 3.3 GHz
POUT
200
Output Power3 at 3.5 GHz
POUT
180
Power Added Efficiency1 at 3.1 GHz
PAE 48
Power Added Efficiency2 at 3.3 GHz
PAE 48
Power Added Efficiency3 at 3.5 GHz
PAE 40
Power Gain1 at 3.1 GHz
GP 11.0
Power Gain2 at 3.3 GHz
GP 10.8
Power Gain3 at 3.5 GHz
GP 10.5
Small Signal Gain
S21 11.4
-3.0 -2.7 56.0
–
250 225 220 60 57 48 12.0 11.5 11.5 14
Input Return Loss
S11 –
-9
Output Return Loss
S22 –
-10
Pulsed Amplitude Droop
D – 0.1
Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH35240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%.
Max.
-2.3 – – –
– – – – – – – – – – -4.5 -4.5 –
Units
Conditions
VDC VDS = 10 V, ID = 57.6 mA VDC VDS = 28 V, ID = 1.0 A A VDS = 6.0 V, VGS = 2.0 V VDC VGS = -8 V, ID = 57.6 mA
W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm dB VDD = 28 V, IDQ = 1.0 A
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
2 CGH35240F Rev 3.0
Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf
Typical Performance
Magnitude (dB)
Gain and Return Losses vs Frequency Measured in CGH35240-AMP Amplifier Circuit.
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20
Gain (dB)
15
10
5
ORL (dB)
0
-5
-10 IRL (dB)
-15
-20
-25
-30 2000
S21 S11 S22
2200
2400
2600
2800
3000
3200
Frequency (MHz)
3400
3600
3800
4000
Typical Pulsed Output Power and Power Gain vs Frequency Measured in CGH35240-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1 A, PIN = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20%
260 16
250 15
240 14
230 13
220 12
210 11
200 10
190
Pout (W) 180
Power Gain (dB)
170
9 8 7
160 3000
3100
3200
3300
Frequency (MHz)
3400
3500
6 3600
Output Power (W)
Gain (dB)
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
3 CGH35240F Rev 3.0
Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf
Typic.