CGH40006P

CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. PackaPgNe’sT:yCpGesH: 4404000160P9 FEATURES Up to 6 GHz Operation 13 dB Small Signal Gain at 2.0 GHz 11 dB Small Signal Gain at 6.0 GHz 8 W typical at PIN = 32 dBm 65 % Efficiency at PIN = 32 dBm 28 V Operation APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 3.0 – May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage VDSS 84 Gate-to-Source Voltage VGS -10, +2 Storage Temperature TSTG -65, +150 Operating Junction Temperature TJ 225 Maximum Forward Gate Current IGMAX 2.1 Maximum Drain Current1 IDMAX 0.75 Soldering Temperature2 TS 245 Thermal Resistance, Junction to Case3 RθJC 9.5 Case Operating Temperature3 TC -40, +150 Note: 1 Current limit for long term, reliable operation 2 Refer to the Appli...