CGH55015F1

CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well. PPNa:cCkGagHe5T5y0p1e5:P4140&1C9G6H&554041051F616 Typical Performance 5.5-5.8GHz (TC = 25˚C) Parameter 5.50 GHz Small Signal Gain 10.7 5.65 GHz 11.0 5.80 GHz 10.7 EVM at PAVE = 23 dBm 1.9 1.8 2.0 EVM at PAVE = 33 dBm 1.5 1.5 1.7 Drain Efficiency at PAVE = 33 dBm 25 25 25 Input Return Loss 11.5 14.5 10.5 Note: Measured in the CGH55015-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Units dB % % % dB Features 5.5 - 5.8 GHz Operation 15 W Peak Power Capability >10.5 dB Small Signal Gain 2 W PAVE < 2.0 % EVM 25 % Efficiency at 2 W Average Power Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications Designed for Multi-carrier DOCSIS Applications Rev 4.0 – May 2015 Subject to change without notice. www.cree.c...