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CGH55030P1 Dataheets PDF



Part Number CGH55030P1
Manufacturers Cree
Logo Cree
Description GaN HEMT
Datasheet CGH55030P1 DatasheetCGH55030P1 Datasheet (PDF)

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1.

  CGH55030P1   CGH55030P1


CGH55030F1 CGH55030P1 CGH60015D


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