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CGH55030P1 Dataheets PDF



Part Number CGH55030P1
Manufacturers Cree
Logo Cree
Description GaN HEMT
Datasheet CGH55030P1 DatasheetCGH55030P1 Datasheet (PDF)

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1.

  CGH55030P1   CGH55030P1



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CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well. PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616 Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.50 GHz 5.65 GHz Small Signal Gain 9.5 10.0 5.80 GHz 9.5 Units dB EVM at PAVE = 29 dBm 1.1 0.9 0.9 % EVM at PAVE = 36 dBm 2.2 1.4 1.4 % Drain Efficiency at PAVE = 4 W 23 24 25 % Input Return Loss 10.8 22 9.3 dB Note: Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Features • 300 MHz Instantaneous Bandwidth • 30 W Peak Power Capability • 10 dB Small Signal Gain • 4 W PAVE < 2.0 % EVM • 25 % Efficiency at 4 W Average Power • Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications • Designed for Multi-carrier DOCSIS Applications Rev 4.0 – May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature VDSS VGS PDISS TSTG TJ 84 -10, +2 14 -65, +150 225 Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque IGMAX IDMAX TS τ 7.0 3 245 60 Thermal Resistance, Junction to Case3 RθJC 4.8 Case Operating Temperature3 TC -40, +150 Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH55030F1 at PDISS = 14 W Electrical Characteristics (TC = 25˚C) Units Volts Volts Watts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C Conditions 25˚C 25˚C 25˚C 25˚C 85˚C 30 seconds Characteristics DC Characteristics1 Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 –2.3 VDC VDS = 10 V, ID = 7.2 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 250 mA Saturated Drain Current IDS 5.8 7.0 – A VDS = 6.0 V, VGS = 2 V Drain-Source Breakdown Voltage VBR 120 RF Characteristics2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted) Small Signal Gain GSS 8.5 – 10.0 – – VDC VGS = -8 V, ID = 7.2 mA dB VDD = 28 V, IDQ = 250 mA Drain Efficiency4 η 19 24 – % VDD = 28 V, IDQ = 250 mA, PAVE = 4 W Error Vector Magnitude Output Mismatch Stress Dynamic Characteristics EVM VSWR .


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