Document
CGH55030F1 / CGH55030P1
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616
Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.50 GHz
5.65 GHz
Small Signal Gain
9.5 10.0
5.80 GHz 9.5
Units dB
EVM at PAVE = 29 dBm
1.1 0.9 0.9 %
EVM at PAVE = 36 dBm
2.2 1.4 1.4 %
Drain Efficiency at PAVE = 4 W
23
24
25 %
Input Return Loss
10.8
22
9.3 dB
Note: Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• 300 MHz Instantaneous Bandwidth • 30 W Peak Power Capability • 10 dB Small Signal Gain • 4 W PAVE < 2.0 % EVM • 25 % Efficiency at 4 W Average Power • Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications • Designed for Multi-carrier DOCSIS Applications
Rev 4.0 – May 2015
Subject to change without notice. www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature
VDSS VGS PDISS TSTG TJ
84 -10, +2
14 -65, +150
225
Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque
IGMAX IDMAX TS
τ
7.0 3 245 60
Thermal Resistance, Junction to Case3
RθJC
4.8
Case Operating Temperature3
TC -40, +150
Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH55030F1 at PDISS = 14 W
Electrical Characteristics (TC = 25˚C)
Units Volts Volts Watts
˚C ˚C mA A ˚C in-oz ˚C/W ˚C
Conditions 25˚C 25˚C
25˚C 25˚C
85˚C 30 seconds
Characteristics DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0 –2.3
VDC VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC VDS = 28 V, ID = 250 mA
Saturated Drain Current
IDS 5.8 7.0 –
A VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain
GSS 8.5
– 10.0
– –
VDC VGS = -8 V, ID = 7.2 mA dB VDD = 28 V, IDQ = 250 mA
Drain Efficiency4
η
19 24
–
% VDD = 28 V, IDQ = 250 mA, PAVE = 4 W
Error Vector Magnitude Output Mismatch Stress Dynamic Characteristics
EVM VSWR
.