CGH55030P1

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well. PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616 Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.50 GHz 5.65 GHz Small Signal Gain 9.5 10.0 5.80 GHz 9.5 Units dB EVM at PAVE = 29 dBm 1.1 0.9 0.9 % EVM at PAVE = 36 dBm 2.2 1.4 1.4 % Drain Efficiency at PAVE = 4 W 23 24 25 % Input Return Loss 10.8 22 9.3 dB Note: Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Features 300 MHz Instantaneous Bandwidth 30 W Peak Power Capability 10 dB Small Signal Gain 4 W PAVE < 2.0 % EVM 25 % Efficiency at 4 W Average Power Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications Designed for Multi-carrier DOCSIS Applications Rev 4.0 – May 2015 Subject to change with...